Equipment Resources

The ABM High Resolution Mask Aligner is a very versatile instrument with interchangeable light sources which allow Near-UV (405-365 nm) as well as Mid-and Deep-UV (254 nm, 220 nm) exposures in proximity (non-contact) or contact (soft & hard) modes.

The ASML PAS 5500/300C DUV Wafer Stepper is our most advanced photolithography tool. It uses a KrF excimer laser to expose features smaller than 0.2 micrometers with layer-to-layer registration better than 45 nanometers.  This projection printer uses a DUV (248nm) lens column (0.63 N.A.) to provide a 4:1 reduction with an exposure field size up to 22mm square. 

The GCA 6300 DSW 5X g-line Wafer Stepper is a 5X reduction stepper using the mercury g-line (436 nm) with an ultimate resolution of 0.9 micrometers. It is generally used when depth of field is more important than resultion.  This projection printer uses a lens column with 0.30 N.A. to provide a 5:1 reduction with a variable field size up to 15mm square.

The GCA AutoStep 200 DSW i-line Wafer Stepper is a 5X reduction wafer exposure tool designed for up to 200mm wafers. All operations are automated, including wafer loading (100mm wafers) and aligning, and reticle loading and aligning (5").  Resolution is better than 0.65um.

The DW2000 is an advanced laser writing system for mask fabrication. It can write mask features as small as 0.8 micrometers.

The Heidelberg Instruments MLA 150 is a maskless aligner for direct-write lithography. Our machine is equipped with write mode I for feature sizes down to 0.6 micrometers and feature separation down to 0.8 micrometers. It has a gray scale exposure mode, both front and backside alignment capability, both 405 nm and 375 nm exposure wavelengths, field by field wafer mapping alignment, and many other capabilities. It accommodates substrates from 5 mm to 225 mm, with thicknesses up to 12mm. It performs all tasks of the DWL 66 it replaces, but faster and with better precision.

Alignment accuracy is 250 nm for local alignment, 500 nm for global alignment, and 1000 nm for backside alignment. The maximum writing speed is 285 mm²/min for both wavelengths.

The Nanoscribe GT2 Laser Lithography System is a two-photon polymerization (2PP) volumetric printer. It can create three-dimensional nanostructures using a NIR femtosecond laser via direct-write onto a photosensitive resin that is subjected to a non-linear two-photon absorption process. This process involves cross-linking the resin via UV absorption. Designs are loaded as STL files, sliced by the DeScribe software and printed layer by layer with one of three objectives (10×, 25× and 63×), with better resolution at higher magnification (at the cost of lower speed) down to a minimum feature size of 0.2 μm.

The MA6 is a workhorse contact lithography system (contact aligner) for up to 150 mm wafers. It can align to features on either the front or the back of the wafer using a video alignment system.

The MJB4 contact aligner can be used for Topside Alignment and Backside Infrared Alignment on substrate sizes ranging 5mm square to 100mm in diameter. It is capable of printing 0.7um lines and spaces with a 365-436nm light source

The YES PB8 450 is a high temperature vacuum oven using a programmable temperature controller and programmed vacuum and nitrogen flow cycles for curing of polyimide, SU8, BCB, and other films. The unit features filtered heated nitrogen purging the chamber in a laminar flow and acting to clean the wafers during the process.

The JBX 6300FS system is an advanced direct write ebeam lithography system for up to 150mm wafers. The unique capability of the JEOL 6300 is that a fifth lens can be used to get a smaller beam spot size and write sub-10 nm features.

The JBX-9500FS is the next generation direct write e-beam lithography system from JEOL. CNF has one of only two 9500s in the U.S., and the only one in an academic environment. The tool is capable of loading samples from 10 mm up to 300 mm and writing features as small as 6 nm or less at 100 MHz clock speed. The system features dramatically improved stitching and overylay over previous systems.

The Nabity system turns an SEM into a simple e beam lithography system. The pattern generator takes control of the deflection system on the SEM and can then be used to expose patterns in resist. This is particularly useful when there is a need for low energy exposures. The tool is very manual, as opposed to the fully automated JEOL systems.

Hot plate for heating 300 mm wafers, and also other large substrates such as large glass plates used for displays.

Spinner for applying resist on 300 mm wafers, and also on photomasks and large glass plates, such as substrates for displays.

1300X hotplates are configured for proximity baking of resist and other films at various temperatures from 90C to 205C.

Cee manual resist spinners accommodate substrates from small pieces to 200mm wafers, with spin speeds over 6000 rpm and acceleration up to 30,000 rpm/sec.

This Edge Bead Removal System uses a Brewer Science Cee Flange Spinner Model 200 platform along with a Nordson 752 Series Diaphragm Dispense Valve and their patented BackPack valve actuator controlled by their ValveMate 8000 Controller. The nozzle is mounted on a 4-axis cantilevered T-Slot arm with position micrometer on the X-axis for adjusting the bead size. It utilizes Microposit EBR 10A as a solvent.

The Suss MicroTec Gamma Cluster Tool is an automated photoresist and wet processing system designed to meet needs for clean, reliable and high throughput photolithography processing.  In addition to the manual facilities used for small lots, CNF has this advanced robotic coating/development system which can process cassettes of wafers up to 200 mm. It also incorporates the AltaSpray spray coating system for non-planar substrates.

The Hamatechs are single wafer automated chemical processors. CNF has a total of six of these units, configured for various cleaning, stripping, and resist development processes.

CNF has three Yield Engineering Systems ovens, a Vapor Priming vacuum oven, an Ammonia Image Reversal oven, and a Polyimide Curing oven. All three systems allow fully programmed operation.

CNF has three AJA magnetron sputtering systems that can be used to deposit a variety of materials. The systems are load locked, allowing rapid sample exchange. Each system has five S-gun type sputtering sources. Both DC and RF magnetron sources are available.

The AJA Quantum Materials Deposition System is a multifunctional phyisical vapor deposition that is dedicated to quantum materials research activities. The tool has a loadlock with in situ ion mill and controlled oxidation system capable of oxidizing films at 10 and 100 Torr. The main chamber has 3 standard magnetron sputter sources and an adjustable proximity sputter source. The chamber also has an in situ ion mill for substrate cleaning and a 6 pocket electron beam evaporation system with a loadlocked crucible exchange

The AJA Quantum Materials Sputter Deposition System is a loadlocked UHV sputter deposition system equipped with a variety of functionalities to enable the creation of next generation quantum devices. Unique to this system is the ability to perform low energy sputter deposition via two adjustable distance, opposing sputter sources positioned perpendicular to the substrate.

This is a load lock E-Beam evaporator.

The CHA thermal evaporator is the only PVD tool at the CNF designated for depositing thin films on substrates that are composed of high vapor pressure materials.

The large chamber on this electron beam evaporator enables users to deposit metals on moderately sized production runs. The tool is capable of conformal evaporation on 4” and 6” wafers and has liftoff platens for 4”, 6” and 8” wafers.

The Endeavor is a specialized magnetron sputtering tool for the deposition of piezoelectric Aluminum Nitride on up to 150 mm wafers.

The PVD75 is a small box coater for reactive sputtering Indium Tin Oxide (ITO), a transparent conductor and Titanium Dioxide (TiO2).

CNF has two CVC cryopumped evaporators used for thin film depositions. The Odd-Hour is capable of both thermal and electron beam evaporation. The Even-Hour has a six-pocket electron-beam crucible turret and is designated for low temperature oxide and nitride depositions.

The AJA Ion Mill is a 22 cm diameter Kaufman RF-ICP gridded ion source producing a collimated Argon ion beam which provides uniform etching of samples up to 6 inch diameter. The sample holder is water cooled at 23 degrees C. and has motorized tilt (0-180 degrees), and continuous sample rotation up to 25 RPM. The system is Cryo Pumped with a base pressure in the 10-8 torr range. It is generally used for materials for which there is no appropriate chemical/plasma etch.

The Anatech USA, model SCE-110-RF, Oxygen plasma Asher is a 10 inch diameter all quartz barrel asher. It is ICP powered 13.56 MHz up to 900 Watts. It is equipped for both oxygen and nitrogen plasma. It can process small pieces and up to 200 mm wafers.

The Glen 1000 system utilizes a oxygen plasma source for stripping of photoresist and other organics. The tool can be setup to give direct ion bombardment or in a downstream ion mode for lower surface damage. Nitrogen is also available.

This ICP system is dedicated to silicon based dielectrics (SiO2, Si3N4, SiOxNy) and is uniquely equipped with a gas ring in addition to traditional shower head gas delivery of highly polymerizing fluorocarbon and hydrofluorocarbon gases. Gases include CF4, CHF3, C4F8, C4F6, CH2F2 as well as additives such as O2, Ar, He, and CO2. This system is mechanically clamped and can accommodate up to 100mm diameter wafers.

CNF has two Oxford 80 open load reactive ion etching systems configured with varous fluorocarbon gases, primarily for etching silicon based films.

This ICP system is configured with chlorine, bromine, and fluorine chemistry. This system is used to etch silicon and germanium photonics structures using HBr, magnetic tunnel junction (MTJ) layers using methanol (CH3OH) based chemistry, and silicon carbide with an SF6 based etch. Fluorine based metal etches such as tungsten are also included in this system. This system is mechanically clamped and can accommodate up to 100mm diameter wafers.

The Versaline DSE is an advanced deep Silicon etcher configured for fast switching Bosch processes. It can create high aspect ratio trenches and channels in Silicon wafers, or completely etch through Silicon wafers.

Able to etch through Silicon wafers with photoresist mask all the way to the edge of the wafer. Works with chips or wafers up to 200mm.

This system is primarily used to isotropically etch silicon dioxide using anhydrous vapor HF. The VHF/alcohol process enables release of silicon MEMS structures without stiction. It is highly selective to silicon, alumina, aluminum, and silicon carbide.

The Plasma Therm System 72 is open load reactive ion etching systems configured with various fluorocarbon gases, primarily for etching silicon based films.

This is a dual chamber RIE loadlocked system with both chlorine and fluorine based chemistry. The 740 (left chamber) has been designated a Au exposure system. It can be used to etch metals and dielectrics with either Au exposure or termination. The 720 (right chamber) is designated for chlorine and fluorine based etching of 2D materials such as MoS2, WSe2, NbSe2, AsSe2, and GaSe and perovskites such as SrRuOx, SrLaAlOx, and BaSrOx. Both chambers can accommodate up to 200mm diameter wafers.

This is a dual chamber loadlocked ICP system with both chlorine and fluorine based chemistry. The left chamber is for chlorine based metal, metal oxide, and metal nitride etching including Cr, Ti, Al, Al-Si-Cu, Ta, Al2O3, Nb, TiN, TaN, AlN, piezo-AlN, and MoSi2. The right chamber is dedicated to III-V materials and includes gases such as Cl2, BCl3, CH4, H2, and SiCl4. Both chambers are mechanically clamped and can accommodate up to 100mm diameter wafers.

Utilizes UV light, heat, and Ozone for the removal of organic contamination as well as th e descumming, UV curing, and stripping of resist.

The Trion is a small load-locked ICP system with BCl3, Cl, CHF3, CF4, O2, N2, O2, and Ar f or etching a wide variety of materials.

The Unaxis 770 is a deep silicon etcher that utilizes the Bosch process as well as other unique processes developed at CNF.

This system is primarily used to isotropically etch silicon, Ge, Mo and any materials that react spontaneously with atomic fluorine. One of its main purposes is to release MEMS structures by etching sacrificial materials without stiction. XeF2 is highly selective to silicon oxide, polymers, and most metals.

Vacuum system with Oxygen Plasma, designed for Resist Stripping and Descum. It uses a 9" diameter Hot Plate stage to control wafer temperature. The system is used to strip resist off single wafers, up to 8" diameter. The 40 KHz plasma is isolated from the wafer by a grounded, perforated metal plate, making this a Down Stream system.

The YES EcoClean is a single wafer, downstream ICP stripper designed for photoresist and polyimide strip, descum, and inorganic substrate cleaning/surface modification. The remote ICP source produces a high-density oxygen plasma and confines any charged plasma species to the plasma chamber such that only charge-neutral species flow from the source to the substrate. The tool can process silicon and gallium arsenide wafers of 2", 3", 4", 5", 6", and 8" diameter. Tool capabilities include 3,000 W RF power and hot plate temperature up to 300 C for fast resist removal.