GSI Plasma Enhanced Chemical Vapor Deposition System
Manager: Tom PennellBackup: Phil Infante
The load-locked GSI Plasma Enhanced Chemical Vapor Deposition (PECVD) system can conformally deposit a variety of dielectric films as well amorphous silicon on whole 100 and 150 mm diameter wafers. Dual frequency RF power supply allows tuning of the film stress. The deposition temperature can be varied from 200 - 400 °C. Deposition rates range from 100 - 400 nm/min
Additional Resources:GSI PECVD Instructions 02_22_12.docx
Process Data 7_16_10 update.xls
Location of tool in cleanroom (jpg)
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This material is based upon work supported by the National Science Foundation under Grant No. ECCS-1542081. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.
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Cornell NanoScale Science & Technology Facility (CNF)
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