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Oxford PECVD

Oxford 100 PECVD System

Manager: Tom Pennell
Backup: Phil Infante


Currently available are a high rate oxide (250nm/min) and a low stress silicon nitride.

Currently being characterized to be added in the near future is a-silicon, doped oxides, SiC, and TEOS Oxide.


  • Low pressure plasma decomposition/reaction of silane & other gases predominantly to form dielectrics for passivation & masking layers at low temperatures
  • Load Locked system capable of 3
  • Gases: SiH4, N2O, NH3, PH3, B2H6, CH4, TEOS, CF4, and O2
  • Typical process pressure: 1.8 Torr
  • Process temperature range of 200 to 400 C

Additional Resources:

Oxford PECVD Instructios updated.doc

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