CNF - Lab and Equipment Information - Oxford PECVD

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Oxford 100 PECVD System

Manager: Tom Pennell

Backup: Phil Infante

Description:

Currently available are a high rate oxide (250nm/min) and a low stress silicon nitride.

Currently being characterized to be added in the near future is a-silicon, doped oxides, SiC, and TEOS Oxide.

Capabilities:

Low pressure plasma decomposition/reaction of silane & other gases predominantly to form dielectrics for passivation & masking layers at low temperatures
Load Locked system capable of 3
Gases: SiH4, N2O, NH3, PH3, B2H6, CH4, TEOS, CF4, and O2
Typical process pressure: 1.8 Torr
Process temperature range of 200 to 400 C

Additional Resources:

Oxford PECVD Instructios updated.doc

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This material is based upon work supported by the National Science Foundation under Grant No. ECCS-1542081. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

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