![]() ![]() ![]() ![]() ![]() |
![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
![]() |
![]() |
![]() |
|
![]() |
![]() |
![]() |
![]()
Oxford PECVD
Oxford 100 PECVD System Manager: Tom Pennell
Backup: Phil Infante
Description:Currently available are a high rate oxide (250nm/min) and a low stress silicon nitride. Capabilities:
Additional Resources:Oxford PECVD Instructios updated.docBack to Top |
![]() |
![]()
|
![]() |
|||
![]() |
![]() ![]() ![]() ![]() |
||
![]() |
![]() This material is based upon work supported by the National Science Foundation under Grant No. ECCS-1542081. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation. Cornell NanoScale Science & Technology Facility (CNF) 250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700 Voice: 607-255-2329, Fax: 607-255-8601, Email: information@cnf.cornell.edu Powered by ITX |