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N+/P+ Polysilicon - C4

MRL Industries Furnace for deposition of polysilicon on silicon substrates

MRL Furnace
Manager: Phil Infante
Backup: Aaron Windsor , Daniel McCollister


The LPCVD Polysilicon Furnace is a low pressure CVD furnace with a 40” flat zone capable of processing up to 6” diameter wafers. Process gases available are SiH4, N2/PH3 and N2/B2H6 mixes for insitu doping, HCL for cleaning. Samples are restricted to silicon based materials only.


  • Doped and undoped silicon films ranging from amorphous to poly
  • As-deposited doped film resistivities of 3-25 mohm-cm
  • Deposition temperatures from 450 to 670°C

Additional Resources:

C4 N+_P+ Poly Furn Instructions
Location of tool in cleanroom (jpg)

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