Button: Contact CNFButton: MultimediaButton: About CNF
Button: Getting StartedButton: PublicationButton: REU ProgramButton: Events & SeminarsButton: Education OutreachButton: TechnologiesButton: Lab Equipment

Button: Lab User

MOS Metal Anneal 3 - C1

MRL Industries Furnace for annealing of silicon based materials with approved metals

MRL Furnace
Manager: Phil Infante
Backup: Aaron Windsor , Daniel McCollister


The Anneal 3 Furnace is an atmospheric furnace with a 40” flat zone capable of processing up to 6” diameter wafers. The furnace tube is equipped with N2 and Ar gas for inert ambient processing, H2 for forming gas mixtures, and O2 for dry oxidation with or without HCL. Samples are restricted to silicon based materials and a limited set of approved metal films.


  • N2 and Ar Anneals
  • H2/N2, H2/Ar Anneals up to 5% H2 max
  • Dry Oxidation
  • HCL during oxidation up to a 4% level
  • Low flow O2 processes
  • Pieces to 6” diameter wafers can be processed
  • Maximum temperature of 1100°C

Additional Resources:

Location of tool in cleanroom (jpg)

Back to Top

Button: Search Button: Search Keywords
Cornell University