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MOS Metal Anneal 4 - C2

MRL Industries Furnace for annealing silicon wafers with a limited set of metals

MRL Furnace
Manager: Phil Infante
Backup: Aaron Windsor , Daniel McCollister

Description:

The Anneal 4 Furnace is an atmospheric furnace with a 40” flat zone capable of processing up to 6” diameter wafers. The furnace tube is equipped with N2 and Ar gas for inert ambient processing, H2 for forming gas mixtures, and O2 for dry oxidation with or without HCL. Samples are restricted to silicon based materials and a limited set of approved metal films.

Capabilities:

  • N2 and Ar Anneals
  • H2/N2, H2/Ar Anneals up to 5% H2 max
  • Dry Oxidation
  • HCL during oxidation up to a 4% level
  • Low flow O2 processes
  • Pieces to 6” diameter wafers can be processed
  • Maximum temperature of 1100°C


Additional Resources:

Location of tool in cleanroom (jpg)


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This material is based upon work supported by the National Science Foundation under Grant No. ECCS-1542081. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

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