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CMOS N+ Polysilicon - D3

CMOS N+ Polyslicon Furnace

Manager: Phil Infante
Backup: Aaron Windsor , Daniel McCollister

Description:

The CMOS N+ LPCVD Polysilicon Furnace is a low pressure CVD furnace with a 40” flat zone capable of processing up to 6” diameter wafers. Process gases available are SiH4, He/PH3 mix for in-situ doping, and HCL for cleaning. Samples are restricted to silicon based materials only and CMOS restricted tools and films.


Additional Resources:

Location of tool in cleanroom (jpg)


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