Oxford ALD FlexAL
Atomic Layer Deposition
Manager: Vince GenovaBackup: Phil Infante , Jeremy Clark
Atomic Layer Deposition (ALD) offers the opportunity to create precisely controlled structures for advanced semiconductor and other nanotechnology applications, by creating ultra-thin films on nanometre and sub-nanometre scales. A unique property of ALD is its ability to deposit material conformally into high aspect ratio features. The technology is widely regarded as a key enabler of the next generation of smaller semiconductor devices.
Available thin film materials:
These highly uniform thin films (<50nm) can be used as high-k dielectrics and metal gates for advanced transistor fabrication, along with applications to MEMS/NEMS and photonics applications.
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This material is based upon work supported by the National Science Foundation under Grant No. ECCS-1542081. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.
Cornell NanoScale Science & Technology Facility (CNF)
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