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Ion Implant - Eaton

Ion Implanter

Eaton Ion Implanter
Manager: Christopher Alpha
Backup: Michael Skvarla

Description:

The Eaton NV-6200AV is a medium current Ion Implanter capable of implanting dopants at beam energies from 10 to 190 KEV. Currently Arsine, Phosphine, Boron Trifluoride, Carbon Dioxide, Argon and Helium are available for implant. The implanter is configured for 6" wafers but carrier wafers are available for implanting 4" wafers or pieces.

Capabilities:

  • Arsine
  • Phosphine
  • Boron Triflouride
  • Carbon Dioxide
  • Argon
  • Helium
  • 6


Results:


Image #1 is a SIMS analysis of an Arsenic implant into silicon with a dose of 5E15 at a beam energy of 150 KEV.

Image #2 is a SIMS analysis of an Phosphorous implant into silicon with a dose of 5E15 at a beam energy of 100 KEV.


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This material is based upon work supported by the National Science Foundation under Grant No. ECCS-1542081. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

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