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Ion Implant - Eaton
Ion Implanter ![]() Manager: Christopher Alpha
Backup: Michael Skvarla
Description:The Eaton NV-6200AV is a medium current Ion Implanter capable of implanting dopants at beam energies from 10 to 190 KEV. Currently Arsine, Phosphine, Boron Trifluoride, Carbon Dioxide, Argon and Helium are available for implant. The implanter is configured for 6" wafers but carrier wafers are available for implanting 4" wafers or pieces. Capabilities:
Results:
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![]() This material is based upon work supported by the National Science Foundation under Grant No. ECCS-1542081. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation. Cornell NanoScale Science & Technology Facility (CNF) 250 Duffield Hall, Cornell University, Ithaca, New York 14853-2700 Voice: 607-255-2329, Fax: 607-255-8601, Email: information@cnf.cornell.edu Powered by ITX |